2-Gigabit Green DDR3 With 30nm Class Technology by Samsung

Samsung 30nm DDR3The world leader in advanced memory technology, Samsung Electronics, announced today that it has begun the mass production of the first 2gigabit Green DDR3 in the industry, using thirty-nanometer class process technology.

“We’re seeing a sharp rise in demand for DDR3 chips and are meeting that need with the timely introduction of 30nm-class Green DDR3 solutions,” said Soo-In Cho, president, Memory Division, Semiconductor Business, Samsung Electronics. “Thirty nano-class DDR3 DRAM will deliver the most satisfying user experience possible, offering extremely high performance and reduced power consumption for PC and server applications designed to capitalize on new multi-core processors.”

The highest performance solution in the whole industry is provided by the thirty nanometer 2gigabit Green DDR3 chips by Samsung, with server applications reaching up to 1.866 gigabits per second at 1.35 volts, and PC Modules reaching up to 2.133 gigabits per second at 1.5 volts. This is three and a half times faster than the DDR2 and 1.6 times faster than fifty nanometer DDR3. Power savings for server applications with the thirty nanometer DDR3 will also be twenty percent greater than the fifty nanometer DDR3.

The thirty nanometer 4GB DDR3 solutions for Personal Computers can operate sixty percent faster than two fifty nanometer 2GB DDR3 solutions when combined with new multi-core Personal Computer platforms, while using sixty-five percent less power.

Samsung also announced that it plans to produce new thirty-nanometer DDR3 chips in a 4gigabit density by the end of the year.

The thirty-nanometer chips provide an overall of 155 percent increase in productivity in comparison to the fifty nanometer ones.

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