GlobalFoundries develops 22 nm FD-SOI technology
GlobalFoundries has officially announced the successful development and launch of the industry’s first 22 nm FD-SOI technology, developed specifically to meet the ultra-low power requirements of the next generation of connected devices. The so-called 22FDX platform delivers FinFET-like performance and energy-efficiency at a cost comparable to 28 nm planar technologies, providing an optimal solution for the rapidly evolving mainstream mobile, Internet-of-Things (IoT), RF connectivity and networking markets.
“The 22FDX platform enables our customers to deliver differentiated products with the best balance of power, performance and cost,” said Sanjay Jha, chief executive officer of GLOBALFOUNDRIES. “In an industry first, 22FDX provides real-time system software control of transistor characteristics: the system designer can dynamically balance power, performance, and leakage. Additionally, for RF and analog integration, the platform delivers best scaling combined with highest energy efficiency.”
The new technology offers industry’s lowest operating voltage at 0.4 volt, enabling ultra-low dynamic power consumption, less thermal impact, and smaller end-product form-factors. The 22FDX platform delivers a 20 percent smaller die size and 10 percent fewer masks than 28nm, as well as nearly 50 percent fewer immersion lithography layers than foundry FinFET.
It is unclear as of now when the first chips made with the new technology will appear on the market.