IBM to manufacture new type of memory

IBM will soon start the production of a new type of memory built on CMOS technology along with the help of the so-called through-silicon via (TSV). TSV is a technology that allows a vertical electrical connection (via) to pass completely through a silicon wafer or die.

The improved IBM production process of TSV will permit Hybrid Micron Memory Cube of Micron Technology to manufacture memory 15 times faster than the current fastest DDR3 desktop memory.

In addition the new memory will need 70% less energy and will enjoy a small size of about 10% of the traditional memory devices. Production will start at IBM’s semiconductor facility in East Fishkill, New York using 32 nm High-K/Metal Gate technology.

IBM Logo

IBM also boasted with a new technology that will allow the production of smaller and faster chips for the PC industry. The new technology is based on a new chemical composition used in 200 mm wafers and employs graphene, carbon nanotubes and Racetrack memory. According to IBM the new technological developments will allow for the total unification of computer systems, communication systems and consumer electronics.


Source: Technews.bg

Related posts

Sony presents new flagship smartphones

Sony presents new flagship smartphones

Sony has presented three new flagship smartphones at IFA 2015 in Berlin and the devices are the Xperia Z5, Xperia Z5 Compact and Xperia Z5 Premium that we talked about a few days ago. All these smartphones will represent Sony in the high-end market segment for the time being. An interesting...

Samsung intros world’s first UFS memory cards

Samsung intros world’s first UFS memory cards

Samsung has had another first in the digital world – the Korean company has unveiled the industry’s first removable memory cards that meet the JEDEC Universal Flash Storage (UFS) 1.0 card extension standard for use in high-resolution mobile shooting devices such as DSLR cameras, 3D VR cameras...

SanDisk 64GB iNAND embedded flash drives

SanDisk Corporation , the global leader in flash memory cards, today introduced the new SanDisk® iNAND™ Embedded Flash Drives (EFD) with support for the e.MMC 4.4 specification. Based on 3-bit-per-cell (X3) NAND flash technology, the drives offer up to 64 gigabytes (GB)1 of capacity in a single...

Leave a comment