Samsung announces 8 Gb Phase Change Memory

The Korean electronics giant has succeeded in another high-tech and science endeavor as it announced the successful development of an 8 Gb Phase Change Memory chip. The new device has an interface speed of 40 Mbps and uses the well-known LPDDR2 interface.

The technological breakthrough is in the capacity – the new chip features 8 times larger capacity than any other Phase Change Memory as of today.

The chip was manufactured on a very advanced 20nm process technology.  20nm is cutting edge when it comes to DDR and flash and even more so with Phase Change Memory.

Samsung Logo

Phase Change Memory operates by changing the structure of each memory cell from crystalline to amorph and back again by heating the each individual cell. The problem so far with this type of memory was that cells tend to also heat adjacent cells. Phase Change Memory combines the best features of DDR and NAND flash and offers a longer endurance than flash.

Samsung will announce additional details about the memory at a conference in San Francisco, USA in February 2012.

Source: Semiaccurate

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