Samsung announces 8 Gb Phase Change Memory

The Korean electronics giant has succeeded in another high-tech and science endeavor as it announced the successful development of an 8 Gb Phase Change Memory chip. The new device has an interface speed of 40 Mbps and uses the well-known LPDDR2 interface.

The technological breakthrough is in the capacity – the new chip features 8 times larger capacity than any other Phase Change Memory as of today.

The chip was manufactured on a very advanced 20nm process technology.  20nm is cutting edge when it comes to DDR and flash and even more so with Phase Change Memory.

Samsung Logo

Phase Change Memory operates by changing the structure of each memory cell from crystalline to amorph and back again by heating the each individual cell. The problem so far with this type of memory was that cells tend to also heat adjacent cells. Phase Change Memory combines the best features of DDR and NAND flash and offers a longer endurance than flash.

Samsung will announce additional details about the memory at a conference in San Francisco, USA in February 2012.

Source: Semiaccurate

Related posts

Dell unveils six new monitors

The US tech giant Dell has unveiled six new monitors that belong to two series – P and E. The novelties include the P1913, P1913S and P2213, belonging to the P series and the E1913, E1913S and E2213, belonging to the E series of course. The P series monitors offer more options and...

Motorola Milestone will be available in Canada only for TELUS customers in early 2010

Motorola Canada today announced it will bring its first Android™-powered device, the much-anticipated Motorola Milestone, only to TELUS customers in early 2010. Motorola Milestone, powered by the newest version of Android, sets a new standard for what a smartphone should be with a richer mobile...

Toshiba designs BG SSDs with BiCS flash memory

Toshiba designs BG SSDs with BiCS flash memory

Toshiba has achieved a major tech breakthrough – the Japanese company will announce a new generation solid-state drives at the 2016 Flash Memory Summit that will take place August 8 – 11. The new SSDs are based on cutting-edge BiCS flash memory with 3-bit-per-cell TLC technology and feature...

Leave a comment