The South Korean tech giant Samsung has announced that it has started the mass production of the industry’s first 4 GB DRAM package based on the specifications of HBM2 memory. The new memory chip will enable better performance and will be used in high performance computers and graphics cards as well as in enterprise servers.
“By mass producing next-generation HBM2 DRAM, we can contribute much more to the rapid adoption of next-generation HPC systems by global IT companies,” said Sewon Chun, senior vice president, Memory Marketing, Samsung Electronics. “Also, in using our 3D memory technology here, we can more proactively cope with the multifaceted needs of global IT, while at the same time strengthening the foundation for future growth of the DRAM market.”
The new memory chip is built on Samsung’s most efficient 20 nm tech process and advanced HBM chip design, which enables energy efficiency, high performance and small dimensions. Thanks to new technologies inside the new 4 GB HBM2 memory chip offers 256 GBps of bandwidth, which is double than that of HBM1 memory and more than seven times faster than current 4 Gb GDDR5 memory chips, which reach 36 Gbps. The new HBM2 memory chips by Samsung also double the bandwidth per watt over a 4 Gb GDDR5 solutuon and use ECC for high reliability.
By the end of the year Samsung will produce an 8 GB HBM2 memory chip too.
Source: Samsung