Samsung Electronics announced that by using 50 nanometer class process technology, has developed a new 1Gb mobile DRAM with a wide I/O interface which have a bandwidth of 12.8 gigabyte per second (four times that of LPDDR2 DRAM (approximately 3.2GB/s)), while in the same time the new memory have lower power consumption by approximately 87 percent.
Samsung’s wide I/O DRAM uses 512 pins for data input/output compared to the previous generation of mobile DRAMs, which used a maximum of 32 pins. The new memory will be used in smartphones and tablet PCs and the company also plans to provide 20nm-class 4Gb wide I/O mobile DRAM sometime in 2013.