Samsung develops Mobile DRAM with wide I/O Interface

Samsung Electronics announced that by using 50 nanometer class process technology, has developed a new 1Gb mobile DRAM with a wide I/O interface which have a bandwidth of 12.8 gigabyte per second (four times that of LPDDR2 DRAM (approximately 3.2GB/s)), while in the same time the new memory have lower power consumption by approximately 87 percent.

Samsung’s wide I/O DRAM uses 512 pins for data input/output compared to the previous generation of mobile DRAMs, which used a maximum of 32 pins. The new memory will be used in smartphones and tablet PCs and the company also plans to provide 20nm-class 4Gb wide I/O mobile DRAM sometime in 2013.

Related posts

Corsair prepares Bulldog mini PC

Corsair prepares Bulldog mini PC

It seems that Corsair might soon enter one more business area – after making computer memory and power supply units, Corsair plans to start producing mini PCs. The first representative of the new mini PC line is called Bulldog and is scheduled to appear by the end of year 2015. The computer...

VIA ARTiGO A1100 DIY PC

VIA Technologies, Inc, a leading innovator of power efficient x86 processor platforms, today announced the launch of its latest DIY PC kit, the VIA ARTiGO A1100, a sub-liter DIY PC kit for enthusiasts who want to taste the most extreme, ultra-compact desktop computing experience. The VIA...

Qualcomm Snapdragon 810 may appear this year

Just like PC processors, chips powering smartphones get more and more powerful all the time adding more and more cores under the hood. The number of cores currently found in most high-end smartphones is four but some devices already feature 8-core chips by MediaTek. Not surprisingly Qualcomm...

Leave a comment