Samsung develops Mobile DRAM with wide I/O Interface

Samsung Electronics announced that by using 50 nanometer class process technology, has developed a new 1Gb mobile DRAM with a wide I/O interface which have a bandwidth of 12.8 gigabyte per second (four times that of LPDDR2 DRAM (approximately 3.2GB/s)), while in the same time the new memory have lower power consumption by approximately 87 percent.

Samsung’s wide I/O DRAM uses 512 pins for data input/output compared to the previous generation of mobile DRAMs, which used a maximum of 32 pins. The new memory will be used in smartphones and tablet PCs and the company also plans to provide 20nm-class 4Gb wide I/O mobile DRAM sometime in 2013.

Related posts

Plants vs Zombies 2

If you haven’t played the first edition of this game then you now have the chance to play the second version and we can tell you that you have missed out a lot. Plants vs Zombies 2 lets you create a nice garden full of flowers and similar plants. So far so good except that...

Limited-Edition Metal Gear Solid: Peace Walker Sony PlayStation Portable Pack

Limited-Edition Metal Gear Solid: Peace Walker Sony PlayStation Portable Pack

Sony Computer Entertainment America announced that a limited-edition Metal Gear Solid: Peace Walker Sony PlayStation Portable Entertainment Package is now available. The package contains Konami's award-winning Metal Gear Solid franchise with the Sony PlayStation Portable 3000 portable gaming...

Roccat unveils the all-new Kova gaming mouse

Roccat unveils the all-new Kova gaming mouse

The folks over at Roccat have decided to treat gamers with a new gaming mouse for the winter season when people have more time to play games. They have unveiled an entirely new Kova gaming mouse that acts as a direct successor to the popular Kova+ gaming mouse, which was released back in year...

Leave a comment