Samsung intros 512GB SSD utilizing high-performance toggle-mode DDR NAND
Samsung Electronics has announced its first solid state drive (SSD) utilizing high-performance toggle-mode DDR NAND. The new 512 gigabyte (GB) SSD use a 30 nanometer-class 32 gigabit chip, has SATA 3.0 Gbps interface, includes 256bit AES encryption, TRIM support and boasts read speed of 250 MBps and a 220MBps write speed.
“The highly advanced features and characteristics of our new SSD were obtained as a direct result of an aggressive push for further development of our NAND flash technology, our SSD controller and our supportive SSD firmware,” said Dong-Soo Jun, executive vice president, memory marketing, Samsung Electronics. “Early introduction of this state-of-the-art toggle DDR solution will enable Samsung to play a major role in securing faster market acceptance of the new wave of high-end SSD technology,” he added.
Samsung plans to begin volume production of the 512GB SSD next month.