Samsung to Mass Produce 65nm PRAM in June
Samsung Electronics will start mass-producing PRAM (Phase change RAM) in June.
PRAM, known as perfect RAM, is the next generation memory chip which features the advantages of NAND and NOR flash memories.
Phase-change Random Access Memory (PRAM) uses a material that turns crystalline when heated. The clrystalline bits represent the logical “1″ in the binary system of computers, while amorphous areas (bits) represent logical “0″.
A key advantage in PRAM is its extremely fast performance. Because PRAM can rewrite data without having to first erase data previously accumulated, it is effectively 30-times faster than conventional flash memory. Incredibly durable, PRAM is also expected to have at least 10-times the life span of flash memory.