Making RAM memory faster and faster is one of the main challenges that the computer industry faces today. It is clear that with current materials making RAM faster is almost impossible but fortunately there are other materials to play with such as graphene. Thanks to this material a scientist at Rice University has created a new type of resistive random-access memory (RRAM) that beats all other kinds of memory in density and speed.
The key feature in the new memory is a material stack that has a built in Schottky contact per bit thus taking the place of the diode required by the most efficient designs to date. Professor James Tour, who is the scientist that stands behind this invention, says the new memory sports ultra-low leakage currents, which enables the creation of up to 162-gigabit (20 GB) crossbar arrays.
You have guessed by now that we are talking about 3D stackable nonvolatile RRAM memory. The new memory will not only be faster than anything we know now but will also bring capacities that we can only dream of. In addition the memory will feature excellent power efficiency as well as virtually unlimited write-erase cycles.
Unfortunately we will not see this memory any time soon since it still sits into laboratories but the good news is that it exists so it will eventually make its way to your computer and smartphone one day.
Source: Eetimes.com