Samsung and Toshiba To Develop Advanced High-Performance NAND Flash Memory
Samsung Electronics and Toshiba Corporation today announced a double data rate (DDR) NAND Flash Memory with a 400 megabit per second interface, toggle DDR 2.0.
This advanced and high-performance NAND memory is expected to be of benefit for mobile and consumer electronics applications which are based on NAND.
Resulting in a NAND chip with a 133Mbps interface, the current toggle DDR 1.0 spec. applies a conventional single data rate NAND architecture to a DDR interface.
Samsung Electronics and Toshiba Corporation are going to focus on the 400Mbps interface for the toggle DDR 2.0 specifications. This will provide a ten-fold increase over 40Mbps SDR NAND and a three-fold increase over toggle DDR 1.0 specifications.
“Our introduction of high-speed 30 nanometer class NAND late last year served as an initial pathway for stimulating acceptance of the new high-performance toggle DDR technology,” said Dong-Soo Jun, executive vice president, memory marketing, Samsung Electronics. “Now, continual upgrades in high-speed performance will create new applications and broader market opportunities for NAND flash memory. The rapid adoption of fourth generation (4G) smartphones, tablet PCs and solid state drives is expected to drive demand for a broader range of high-performance NAND solutions.”
“Toggle DDR provides a faster interface than conventional NAND using an asynchronous design, delivering the benefits of high-speed data transfer to a wider market, such as for solid state drive (SSD) applications including enterprise storage, mobile phones, multimedia terminals and consumer products,” said Masaki Momodomi, Technical Executive, Memory product, Toshiba Corporation. “And we will continue to make the best effort possible to create standard, high-speed NAND Flash interface solutions with NAND vendors and customers, which will accelerate the revolution in storage applications.”