Samsung starts production of 8-gigabit DDR4 memory on 20 nm
Samsung Electronics has announced that the company now produces the industry’s most advanced 8-gigabit DDR4 memory as well as 32 GB DDR4 memory modules both of which are based on a new 20 nm process technology. The new memory is designed for use in enterprise servers.
“Our new 20 nm 8 Gb DDR4 DRAM more than meets the high performance, high density and energy efficiency needs that are driving the proliferation of next-generation enterprise servers,” said Jeeho Baek, Vice President of Memory Marketing at Samsung Electronics. “By expanding the production of our 20 nm DRAM line-ups, we will provide premium, high-density DRAM products, while handling increasing demand from customers in the global premium enterprise market.”
The new 8 Gb DDR4 memory is the latest addition to Samsung’s line of 20 nm DDR4 memory that now also includes 20 nm 4 Gb DDR3 for PCs and 20 nm 6 Gb LPDDR3 for mobile devices. Thanks to the new 8 Gb DDR4 chips, Samsung now produces 32 GB registered dual in-line memory modules (RDIMM). The memory reaches up to 2400 megabits per second (Mbps) of data transfer rate per pin, which is about 29 per cent faster than the 1866 Mbps bandwidth that a DDR3 server module offers. In addition to this the use of the 3D through silicon via (TSV) technology will make the creation of 128 GB server memory modules possible, which will further enhance the expansion of the high-density DRAM market. The memory also offers error correction features for better data reliability and uses 1.2V just like any other DDR4 memory.