The Japanese Toshiba has achieved another first in the tech industry – the company has announced the successful development of the world’s first 15 nm NAND flash memory with mass production starting at the end of April 2014.
The new process will be used in 2-bit-per-cell 128-gigabit (16 GB) NAND flash memory. The new process will retire the older 19 nm technology while at the same time provide improved peripheral circuitry and better data transfer rate that will reach 533 megabits per second, which is 1.3 times faster when compared to memory made on 19 nm process node.
In addition to that Toshiba will use the new manufacturing process for 3-bit-per-cell memory. This type of memory will be produced by June 2014 and will later be used in smartphones and tablets as well in controllers for embedded NAND flash memory and solid-state drives.